1 UM3203 dual p-ch 30v fast switching mosfets symbol parameter rating units v ds drain-source voltage -30 v v gs gate-sou u ce voltage f 20 3 v i d @t a =25 continuous drain current, -v gs @ -10v 1 -6.5 a i d @t a =70 continuous drain current, -v gs @ -10v 1 -5.2 a i dm pulsed drain current 2 -26 a eas single pulse avalanche energy 3 176 mj i as avalanche current -38 a p d @t a =25 total power dissipation 4 1.5 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol parameter 3 typ. max. unit r ja thermal resistance junction-ambient 1 --- 85 /w 3 r jc thermal resistance junction-case 1 --- 25 /w 3 id -30v 25m
-6.5a the UM3203 is the highest performance trench p-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . the UM3203 meet the rohs and green product requirement , 100% eas guaranteed with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z 100% eas guaranteed z green device available general description features applications z high frequency point-of-load synchronous buck converter for mb/nb/umpc/vga z networking dc-dc power system z load switch absolute maximum ratings thermal data sop8 pin configuration product summery bv dss r ds(on)
2 dual p-ch 30v fast switching mosfets symbol parameter 3 conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =-250ua -30 --- --- v ? bv dss a? t j bv dss temperature coefficient reference to 25 , i d =-1ma --- -0.022 --- v/ r ds(on) static drain-source on-resistance 2 v gs =-10v , i d =-6a --- 20 25 m : v gs =-4.5v , i d =-4a --- 32 42 v gs(th) gate threshold voltage v gs =v ds , i d =-250ua -1.0 -1.5 -2.5 v ? v gs(th) v gs(th) temperature coefficient --- 4.6 --- mv/ i dss drain-source leakage current v ds =-24v , v gs =0v , t j =25 --- --- -1 ua v ds =-24v , v gs =0v , t j =55 --- --- -5 i gss gate-source leakage current v gs e f 20v , v ds =0v --- --- f 100 na gfs forward transconductance v ds =-5v , i d =-6a --- 17 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz --- 13 26 : q g total gate charge (-4.5v) v ds =-15v , v gs =-4.5v , i d =-6a --- 12.6 17.6 nc q gs gate-source charge --- 4.8 6.7 q gd gate-drain charge --- 4.8 6.7 t d(on) turn-on delay time v dd =-15v , v gs =-10v , r g =3.3 : , i d =-6a --- 4.6 9.2 ns t r rise time --- 14.8 26.6 t d(off) turn-off delay time --- 41 82 t f fall time --- 19.6 39.2 c iss input capacitance v ds =-15v , v gs =0v , f=1mhz --- 1345 1883 pf c oss output capacitance --- 194 272 c rss reverse transfer capacitance --- 158 221 symbol parameter 3 conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =-25v , l=0.1mh , i as =-20a 49 --- --- mj symbol parameter 3 conditions min. typ. max. unit i s continuous source current 1,6 v g =v d =0v , force current --- --- -6.5 a i sm pulsed source current 2,6 --- --- -26 a v sd diode forward voltage 2 v gs =0v , i s =-1a , t j =25 --- --- -1.2 v t rr reverse recovery time i f =-6a , di/dt=100a/s , t j =25 --- 16.3 --- ns q rr reverse recovery charge --- 5.9 --- nc note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width ? 300us , duty cycle ? 2% 3.the eas data shows max. rating . the test condition is v dd =-25v,v gs =-10v,l=0.1mh,i as =-38a 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. electrical characteristics (t j =25 , unless otherwise noted) guaranteed avalanche characteristics diode characteristics UM3203
3 dual p-ch 30v fast switching mosfets 16 30 44 46810 -v gs (v) r dson (m
) i d =-6a 0 2 4 6 8 10 12 0.2 0.4 0.6 0.8 1 -v sd , source-to-drain voltage (v) -i s source current(a) t j =150 : t j =25 : 0 0.5 1 1.5 -50 0 50 100 150 t j ,junction temperature ( : ) normalized v gs(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( : ) normalized on resistance typical characteristics fig.1 typical output characteristics fig.2 on-resistance v.s gate-source fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j UM3203
4 dual p-ch 30v fast switching mosfets 10 100 1000 10000 15913172125 -v ds drain to source voltage(v) capacitance (pf) f=1.0mhz ciss coss crss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r ja ) 0.01 0.05 0.1 0.2 duty=0.5 single p dm d = t on /t t jpeak = t c +p dm xr jc t on t fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive switching waveform UM3203
|
